66 research outputs found

    Theoretical Study on Relaxed Surrounding Rock Pressure on Shallow Bias Neighborhood Tunnels under Seismic Load

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    To study the distribution of relaxed surrounding rock pressure on the shallow bias neighborhood tunnels under the combined action of horizontal and vertical earthquake force, finite element software was used for failure mode analysis. Moreover, with the pseudo-static method, the calculation formula for the relaxed pressure on the shallow bias neighborhood tunnels was derived and used to analyze the variation of the rupture angle of these tunnels under the action of the seismic force. The study shows that: shallow bias neighborhood tunnels basically follow a “W” failure pattern under the combined action of horizontal and vertical seismic force, and the failure scope of the surrounding rock is controlled by four rupture angles. Rupture angles β2 and β3 between the deep and shallow tunnels of the shallow bias neighborhood tunnels are not affected by the surface slope. For tunnels with the same grade of the surrounding rock, the greater the seismic intensity, the smaller the value of β2, and the greater the value of β3. While at the same seismic intensity, the higher the grade of the surrounding rock, the smaller the β2 and β3. Ruptures angles β1 and β4 are influenced by the surface slope, seismic intensity and surrounding rock grades. A steeper surface slope leads to a smaller β1 and a greater β4; β1 increase and β4 decrease with increasing seismic intensity; while, β1 and β4 both show a decreasing trend with an increasing rock grade

    Towards Visual Foundational Models of Physical Scenes

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    We describe a first step towards learning general-purpose visual representations of physical scenes using only image prediction as a training criterion. To do so, we first define "physical scene" and show that, even though different agents may maintain different representations of the same scene, the underlying physical scene that can be inferred is unique. Then, we show that NeRFs cannot represent the physical scene, as they lack extrapolation mechanisms. Those, however, could be provided by Diffusion Models, at least in theory. To test this hypothesis empirically, NeRFs can be combined with Diffusion Models, a process we refer to as NeRF Diffusion, used as unsupervised representations of the physical scene. Our analysis is limited to visual data, without external grounding mechanisms that can be provided by independent sensory modalities.Comment: TLDR: Physical scenes are equivalence classes of sufficient statistics, and can be inferred uniquely by any agent measuring the same finite data; We formalize and implement an approach to representation learning that overturns "naive realism" in favor of an analytical approach of Russell and Koenderink. NeRFs cannot capture the physical scenes, but combined with Diffusion Models they ca

    Review of Recently Progress on Neural Electronics and Memcomputing Applications in Intrinsic SiOx-Based Resistive Switching Memory

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    In this chapter, we focus on the recent process on memcomputing (memristor + computing) in intrinsic SiOx-based resistive switching memory (ReRAM or called memristor). In the first section of the chapter, we investigate neuromorphic computing by mimicking the synaptic behaviors in integrating one-diode and one-resistive switching element (1D-1R) architecture. The power consumption can be minimized further in synaptic functions because sneak-path current has been suppressed and the capability for spike-induced synaptic behaviors has been demonstrated, representing critical milestones and achievements for the application of conventional SiOx-based materials in future advanced neuromorphic computing. In the next section of chapter, we will discuss an implementation technique of implication operations for logic-in-memory computation by using a SiOx-based memristor. The implication function and its truth table have been implemented with the unipolar or nonpolar operation scheme. Furthermore, a circuit with 1D-1R architecture with a 4 × 4 crossbar array has been demonstrated, which realizes the functionality of a one-bit full adder as same as CMOS logic circuits with lower design area requirement. This chapter suggests that a simple, robust approach to realize memcomputing chips is quite compatible with large-scale CMOS manufacturing technology by using an intrinsic SiOx-based memristor
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